SOT-RAM, a promising type of next-generation magnetic memory, could pave the way to ultra-low-power electronics. However, scientists have identified a source of disturbance during the read operation in SOT-RAMs that compromises their reliability. Fortunately, they also found a method to greatly reduce this disturbance by slightly modifying the SOT-RAM structure. Their findings will help make this type of memory faster and more reliable, helping its commercialization for sustainable IoT applications.
