<li>Yosuke Sasama, Taisuke Kageura, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide. <strong>High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures</strong>. <em>Nature Electronics</em>, 2021; 5 (1): 37 DOI: <a href="http://dx.doi.org/10.1038/s41928-021-00689-4" rel="nofollow" target="_blank">10.1038/s41928-021-00689-4</a>
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